Table of Contents
Cover
Series
Title
Copyright
Preface
List of Contributors
I: Ceramic Material Classes
1: Ceramic Oxides
1.1 Introduction
1.2 Aluminum Oxide
1.3 Magnesium Oxide
1.4 Zinc Oxide
1.5 Titanium Dioxide
1.6 Zirconium Oxide
1.7 Cerium Oxide
1.8 Yttrium Oxide
References
2: Nitrides
2.1 Silicon Nitride
2.2 Boron Nitride
2.3 Aluminum Nitride
2.4 Titanium Nitride
2.5 Tantalum Nitride
2.6 Chromium Nitride
2.7 Ternary Nitrides
2.8 Light-Emitting Nitride and Oxynitride Phosphors
References
3: Gallium Nitride and Oxonitrides
3.1 Introduction
3.2 Gallium Nitrides
3.3 Gallium Oxides
3.4 Gallium Oxonitrides
3.5 Outlook
References
4: Silicon Carbide- and Boron Carbide-Based Hard Materials
4.1 Introduction
4.2 Structure and Chemistry
4.3 Production ofParticles and Fibers
4.4 Dense Ceramic Shapes
4.5 Properties of Silicon Carbide- and Boron Carbide-Based Materials
4.6 Application of Carbides
References
5: Complex Oxynitrides
5.1 Introduction
5.2 Principles of Silicon-Based Oxynitride Structures
5.3 Complex Si–Al–O–N Phases
5.4 M–Si–Al–O–N Oxynitrides
5.5 Oxynitride Glasses
5.6 Oxynitride Glass Ceramics
5.7 Conclusions
References
6: Perovskites
6.1 Introduction
6.2 Crystal Structure
6.3 Physical Properties
6.4 Chemical and Catalytic Properties
6.5 Summary
References
7: The M
n
+1
AX
n
Phases and their Properties
7.1 Introduction
7.2 Bonding and Structure
7.3 Elastic Properties
7.4 Electronic Transport
7.5 Thermal Properties
7.6 Mechanical Properties
7.7 Tribological Properties and Machinability
7.8 Concluding Remarks
References
II: Structures and Properties
8: Structure–Property Relations
8.1 Introduction
8.2 Self-Reinforced Silicon Nitrides
8.3 Fibrous Grain-Aligned Silicon Nitrides (Large Grains)
8.4 Fibrous Grain-Aligned Silicon Nitrides (Small Grains)
8.5 Grain Boundary Phase Control
8.6 Fibrous Grain-Aligned Porous Silicon Nitrides
References
9: Dislocations in Ceramics
9.1 Introduction
9.2 The Critical Resolved Shear Stress
9.3 Crystallography of Slip
9.4 Dislocations in Particular Oxides
9.5 Work Hardening
9.6 Solution Hardening
9.7 Closing Remarks
References
10: Defect Structure, Nonstoichiometry, and Nonstoichiometry Relaxation of Complex Oxides
10.1 Introduction
10.2 Defect Structure
10.3 Oxygen Nonstoichiometry
10.4 Nonstoichiometry Re-Equilibration
References
11: Interfaces and Microstructures in Materials
11.1 Introduction
11.2 Interfaces in Materials
11.3 Practical Implications
11.4 Summary and Outlook
References
III: Mechanical Properties
12: Fracture of Ceramics
12.1 Introduction
12.2 Appearance of Failure and Typical Failure Modes
12.3 A Short Overview of Damage Mechanisms
12.4 Brittle Fracture
12.5 Probabilistic Aspects of Brittle Fracture
12.6 Delayed Fracture
12.7 Concluding Remarks
References
13: Creep Mechanisms in Commercial Grades of Silicon Nitride
13.1 Introduction
13.2 Material Characterization
13.3 Discussion of Experimental Data
13.4 Models of Creep in Silicon Nitride
13.5 Conclusions
References
14: Fracture Resistance of Ceramics
14.1 Introduction
14.2 Theory of Fracture
14.3 Toughened Ceramics
14.4 Influence of Crack Growth Resistance Curve Upon Failure by Fracture
14.5 Determination of Fracture Resistance
14.6 Fatigue
14.7 Concluding Remarks
References
15: Superplasticity in Ceramics: Accommodation-Controlling Mechanisms Revisited
15.1 Introduction
15.2 Macroscopic and Microscopic Features of Superplasticity
15.3 Nature of the Grain Boundaries
15.4 Accommodation Processes in Superplasticity
15.5 Applications of Superplasticity
15.6 Future Prospective in the Field
References
IV: Thermal, Electrical, and Magnetic Properties
16: Thermal Conductivity
16.1 Introduction
16.2 Thermal Conductivity of Dielectric Ceramics
16.3 High-Thermal Conductivity Nonoxide Ceramics
16.4 Mechanical Properties of High-Thermal Conductivity Si
3
N
4
Ceramics
16.5 Concluding Remarks
References
17: Electrical Conduction in Nanostructured Ceramics
17.1 Introduction
17.2 Space Charge Layers in Semiconducting Ceramic Materials
17.3 Effect of Space Charge Profiles on the Observed Conductivity
17.4 Influence of Nanostructure on Charge Carrier Distributions
17.5 Case Studies
17.6 Conclusions and Observations
References
18: Ferroelectric Properties
18.1 Introduction
18.2 Intrinsic Properties: The Anisotropy of Properties
18.3 Extrinsic Properties: Hard and Soft Ferroelectrics
18.4 Textured Ferroelectric Materials
18.5 Ferroelectricity and Magnetism
18.6 Fatigue in Ferroelectric Materials
References
19: Magnetic Properties of Transition-Metal Oxides: From Bulk to Nano
19.1 Introduction
19.2 Properties of Transition Metal 3d Orbitals
19.3 Iron Oxides
19.4 Ferrites
19.5 Chromium Dioxide
19.6 Manganese Oxide Phases
19.7 Concluding Remarks
References
Index
End User License Agreement
List of Tables
1: Ceramic Oxides
Table 1.1 Some selected properties of single crystal α-alumina.
Table 1.2 Characteristic properties of various polycrystalline aluminas.
Table 1.3 Physical properties for single-crystal MgO.
Table 1.4 Basic physical properties of single-crystal ZnO.
Table 1.5 Physical properties of various polymorphs of titania single crystals.
Table 1.6 Physical properties of fully dense sintered polycrystalline titanium dioxide ceramics.
Table 1.7 Lattice parameters of zirconia polymorphs.
Table 1.8 Some physical properties of single-crystal ZrO
2
.
Table 1.9 Typical properties of TZP.
2: Nitrides
Table 2.1 Properties of Si
3
N
4
measured on the polycrystalline ceramics [5, 68].
Table 2.2 Some properties of BN (⊥ – perpendicular to basal planes).
Table 2.3 Characteristic properties of TiN.
Table 2.4 Properties of dense ternary nitrides [280].
3: Gallium Nitride and Oxonitrides
Table 3.1 Experimental and theoretical investigations on zincblende-structured GaN.
Table 3.2 Summary of the transformation of zb-orw-GaN under high-pressure conditions into rock salt (rs)-GaN (B1) phase.
Table 3.3 Summary of the initial synthesis processes and deposition techniques leading to the injection laser diode.
Table 3.4 Listing of lattice parameters for hexagonal wurtzite-structured AlN, GaN, and InN.
Table 3.5 Parameters of the third-order Birch–Murnaghan equations of states of a three unit-cell-based atomic modelsof the spinel-structured Ga
3
O
3
N that have the lowest energy calculated within the LDA
a)
.
4: Silicon Carbide- and Boron Carbide-Based Hard Materials
Table 4.1 Comparison of the properties of
β-SiC
whisker (manufactures’ data).
Table 4.2 Morphological characteristics of commercial SiC platelets.
Table 4.3 Mechanical characteristics of various SiC fibers.
Table 4.4 Mechanical and physical data for fiber-reinforced SiC matrix composites. After Heidenreich [345].
Table 4.5 Physical properties of various SiC ceramics.
Table 4.6 Physical properties of SiC ceramics used in tribological applications.
Table 4.7 Boron carbide: Comparison between theoretical electronic properties, experimental characterization and intrinsic point defects determined experimentally. After Werheit [516].
Table 4.8 Physical properties of SiC ceramics used in armor applications. After Karandikar
et al.
[576].
Table 4.9 Physical properties of boron carbide ceramics used in armor applications. After Karandikar
et al.
[576].
7: The M
n
+1
AX
n
Phases and their Properties
Table 7.1 List of M
n
+
1
AX
n
phases known to date to exist. The theoretical density (Mg m
–3
) is shown in bold text. The
a-
and
c
-lattice parameters (Å) are shown in brackets. Most of this list appeared in a 1970 review paper [10]. In this and other tables, the 312s are highlighted yellow, and the 413s gray. The list does not include solid solutions.
Table 7.2 Young's modulus (
E
), shear modulus (
G
), and Poisson ratio
(v)
of select MAX phases. Also listed are the bulk moduli values (
B
*), measured directly in an anvil cell, and
B
‡, calculated from the shear and longitudinal sound velocities. The references and values are color-coded; the 312s are highlighted yellow, and 413s gray.
Table 7.3 Summary of electrical transport parameters calculated from the resistivity (
), Hall coefficient (R
H
), and magnetoresistance coefficient (α), for select MAX phases. Unless otherwise noted, µ
n
= µ
p
= √a
is assumed. Note that this approach can, and does, result in slightly different values than assuming
n =p.
The residual resistivity ratio is listed in column 4.
Table 7.4 Summary of total (
k
th
), phonon (
k
ph
) and electron (
k
e
) thermal conductivities (WmK
–1
) for a number of MAX phases, near-stoichiometric TiC
x
and NbC
x
. Color-coding as Tables 7.1 and 7.2.
Table 7.5 Summary of TECs for various MAX phases determined from both high-temperature diffraction and dilatometry. Numbers in parentheses are estimated standard deviations in the last significant figure of the refined parameter.
Table 7.6 Summary of creep parameters for Ti
3
SiC
2
.
9: Dislocations in Ceramics
Table 9.1 Crystal structures of some oxides.
Table 9.2 Slip systems in oxides.
Table 9.3 Dissociation of dislocations in oxides.
Table 9.4 Values of
m
[the
p
O
2
exponent in the creep rate of Eq. (7)] for various oxygen defects in the transition metal oxides with the rock-salt structure [44].
Table 9.5 Stacking fault energy and c/a ratio for a number of crystals with the wurtzite structure.
Table 9.6 Experimental and theoretical fault energies for sapphire on various planes.
Table 9.7 Slip planes in oxides with the spinel structure.
10: Defect Structure, Nonstoichiometry, and Nonstoichiometry Relaxation of Complex Oxides
Table 10.1 Matrix of majority disorder types in the systems of BaTiO
3
. The top left rectangle demarcated by thick solid lines is for the pure case; this rectangle plus the rightmost column for the acceptor-doped case; and the rectangle plus the bottom-most row for the donor-doped case. A pair of signs out of +,0,– at each element are for η and δ: e.g., (+,0) is for η >0 and δ≈0.
Table 10.2 Numerical values for
m
and
n
such that
in each majority disorder regime of Table 10.1.
11: Interfaces and Microstructures in Materials
Table 11.1 A sample calculation of relative surface energies in a simple fcc crystal based on the broken bond model when the first and second nearest-neighbor interaction are considered.
Table 11.2 Experimentally measured growth rate of various surfaces of a Mohr salt with cubic symmetry and the corresponding reticular density of each surface. Note that all the values are normalized by that of the (001) surface. After Ref. [29]..
13: Creep Mechanisms in Commercial Grades of Silicon Nitride
Table 13.1 Classification of the creep cavities in the studied silicon nitride ceramics [23, 24, 28, 29].
14: Fracture Resistance of Ceramics
Table 14.1 Expressions for stress intensity factor for common ceramic defect types.
15: Superplasticity in Ceramics: Accommodation-Controlling Mechanisms Revisited
Table 15.1 Creep laws as predicted by Wakai’s model [81], depending on the steps density and the controlling mechanism.
16: Thermal Conductivity
Table 16.1 Thermal conductivity at room temperature for several adamantine crystals.
a)
.
Table 16.2 Theoretical estimates of the thermal conductivity of β-Si
3
N
4
crystals.
Table 16.3 Thermal conductivity of sintered β-Si
3
N
4
ceramics with various sintering additives at room temperature, as reported in the literature.
Table 16.4 Oxygen content in Si
3
N
4
crystal lattice prepared by various methods [46].
Table 16.5 Characteristics of raw Si powders used for the preparation of sintered reaction-bonded silicon nitrides (SRBSN) and their thermal conductivities (for comparison, the properties of normal sintered Si
3
N
4
are also shown) [60].
Table 16.6 Thermal conductivity in three directions for textured Si
3
N
4
fabricated by combined seeding and tape casting [53].
19: Magnetic Properties of Transition-Metal Oxides: From Bulk to Nano
Table 19.1 Electronic configurations and ground-state effective spins of 3d transition-metal ions in weak (high-spin state) and strong (low-spin state) octahedral crystal field.
Table 19.2 Structural and magnetic properties of the different iron oxide phases.
Table 19.3 Crystal lographic summary of tunnel and layered manganese oxide structures with corresponding bulk magnetic properties.
Table 19.4 Crystalline phases, precursors, synthesis conditions and morphologies overview for the synthesized MnO
2
nanostructures.